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| SPICE MODEL: MMDT2907A MMDT2907A DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) A C2 B1 E1 SOT-363 Dim A BC Min 0.10 1.15 2.00 0.30 1.80 -- 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8 B C D F M Mechanical Data * * * * * * * * Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 4 Ordering and Date Code Information: See Page 4 Weight: 0.006 grams (approximate) K E2 B2 C1 0.65 Nominal H H J K L M J D C2 B1 E1 F L All Dimensions in mm E2 B2 C1 * Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RJA Tj, TSTG Value -60 -60 -5.0 -600 200 625 -55 to +150 Unit V V V mA mW C/W C Characteristic Collector Current - Continuous (Note 1) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. No purposefully added lead. DS30109 Rev. 10 - 2 1 of 4 www.diodes.com MMDT2907A (c) Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) @TA = 25C unless otherwise specified Symbol Min Max -10 -50 -50 Unit Test Condition V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IBL -60 -60 -5.0 V V V nA A nA nA IC = -10A, IE = 0 IC = -10mA, IB = 0 B IE = -10A, IC = 0 VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = 125C VCE = -30V, VEB(OFF) = -0.5V VCE = -30V, VEB(OFF) = -0.5V IC = -100A, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA B B DC Current Gain hFE 75 100 100 100 50 300 -0.4 -1.6 -1.3 -2.6 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time Notes: 3. Short duration pulse test used to minimize self-heating effect. VCE(SAT) VBE(SAT) V V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA B B Cobo Cibo fT -- 200 8.0 30 pF pF MHz VCB = -10V, f = 1.0MHz, IE = 0 VEB = -2.0V, f = 1.0MHz, IC = 0 VCE = -20V, IC = -50mA, f = 100MHz toff td tr toff ts tf 45 10 40 100 80 30 ns ns ns ns ns ns VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA VCC = -30V, IC = -150mA, IB1 = -15mA 200 Note 1 PD, POWER DISSIPATION (mW) f = 1MHz 150 100 CAPACITANCE (pF) Cibo 50 Cobo 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device) VR, REVERSE VOLTAGE (V) Fig. 2, Typical Capacitance Characteristics 2 of 4 www.diodes.com MMDT2907A (c) Diodes Incorporated DS30109 Rev. 10 - 2 VCE, COLLECTOR-EMITTER VOLTAGE (V) -1.6 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) -0.6 IC = -300mA IC = -100mA -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.001 IC = -1mA IC = -10mA -0.5 -0.4 IC = 10 IB IC = -30mA -0.3 TA = 150C -0.2 TA = 25C -0.1 TA = -50C 0 -0.01 -0.1 -1 -10 -100 -1 -10 -100 -1000 IB, BASE CURRENT (mA) Fig. 3, Typical Collector Saturation Region 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Collector Emitter Saturation Voltage vs. Collector Current -1.0 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = -5V TA = 150C VCE = -5V -0.9 -0.8 -0.7 -0.6 TA = 25C -0.5 -0.4 -0.3 -0.2 TA = 150C TA = -50C hFE, DC CURRENT GAIN 100 TA = 25C TA = -50C 10 1 -1 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) Fig. 5, DC Current Gain vs Collector Current 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = -5V -0.1 -1 -10 -100 IC, COLLECTOR CURRENT (mA) Fig. 6, Base Emitter Voltage vs. Collector Current 100 10 1 -1 -10 IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs. Collector Current -100 DS30109 Rev. 10 - 2 3 of 4 www.diodes.com MMDT2907A (c) Diodes Incorporated Ordering Information Device (Note 4) Packaging SOT-363 Shipping 3000/Tape & Reel MMDT2907A-7-F Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K2F = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Data Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 2003 P May 5 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30109 Rev. 10 - 2 4 of 4 www.diodes.com MMDT2907A (c) Diodes Incorporated |
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